| PART |
Description |
Maker |
| 1N4255 1N4256 1N4257 1N5181 1N5182 1N5183 1N5184 1 |
VOIDLESS-HERMETICALLY-SEALED HIGH VOLTAGE RECTIFIERS
|
Microsemi Corporation
|
| 1N4490 1N4470 1N4461 1N4486 1N4480 1N4471 1N4473 1 |
VOIDLESS-HERMETICALLY-SEALED 1.5 WATT GLASS ZENER DIODE
|
Microsemi Corporation
|
| JANTX1N4947 JANTX1N4942 JANTX1N4946 JANTX1N4948 JA |
VOIDLESS-HERMETICALLY SEALED FAST RECOVERY GLASS RECTIFIERS
|
Microsemi Corporation
|
| 1N5804 1N580207 |
VOIDLESS-HERMETICALLY-SEALED ULTRAFAST RECOVERY GLASS RECTIFIERS
|
Microsemi Corporation
|
| 1N5418 1N5415 1N541508 1N5416 |
VOIDLESS-HERMETICALLY SEALED FAST RECOVERY GLASS RECTIFIERS
|
Microsemi Corporation
|
| 1N5623 1N5615 1N5615_07 1N5617 1N5619 1N5621 |
VOIDLESS-HERMETICALLY SEALED FAST RECOVERY GLASS RECTIFIERS
|
MICROSEMI[Microsemi Corporation]
|
| 1N3957 1N3611_04 1N3614 1N361104 |
VOIDLESS-HERMETICALLY-SEALED STANDARD RECOVERY GLAS RECTIFIERS
|
MICROSEMI[Microsemi Corporation]
|
| 1N6661 1N6663 JAN1N6663 JANTXV1N6663 JANTX1N6663 1 |
VOIDLESS-HERMETICALLY-SEALED STANDARD RECOVERY GLASS RECTIFIERS
Signal or Computer Diode; Package: B; IO (A): 0.5; IFSM (A): 5; Cj (pF): 20; Vrwm (V): 600; VF (V): 1; IR (µA): 0.05; 0.5 A, SILICON, SIGNAL DIODE, DO-35
|
Microsemi Corporation
Microsemi, Corp.
|
| 1N6662US 1N6663US 1N6661US JAN1N6662US JANTXV1N666 |
VOIDLESS-HERMETICALLY-SEALED STANDARD RECOVERY GLASS RECTIFIERS
Signal or Computer Diode; Package: A_SQ._MELF; IO (A): 0.5; IFSM (A): 5; Cj (pF): 20; Vrwm (V): 400; VF (V): 1; IR (µA): 0.05; 0.5 A, SILICON, SIGNAL DIODE, DO-35
Signal or Computer Diode; Package: A_SQ._MELF; IO (A): 0.5; IFSM (A): 5; Cj (pF): 20; Vrwm (V): 225; VF (V): 1; IR (µA): 0.05; 0.5 A, SILICON, SIGNAL DIODE, DO-35
|
Microsemi Corporation
Microsemi, Corp.
|
| 2N5782L 2N5782L.MOD |
3.5 A, 65 V, PNP, Si, POWER TRANSISTOR, TO-205AA HERMETIC SEALED, METAL, TO-5, 3 PIN
Bipolar PNP Device in a Hermetically sealed TO5
|
TT electronics Semelab, Ltd.
Seme LAB
|
